IPD50P04P4L

IPD50P04P4L-11 vs IPD50P04P4L-11 . vs IPD50P04P4L-11 4P04L11

 
PartNumberIPD50P04P4L-11IPD50P04P4L-11 .IPD50P04P4L-11 4P04L11
DescriptionMOSFET P-Ch -40V -50A DPAK-2 OptiMOS-P2
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current50 A--
Rds On Drain Source Resistance17.2 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage4.5 V--
Qg Gate Charge45 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation58 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameOptiMOS--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
SeriesOptiMOS-P2--
Transistor Type1 P-Channel--
Width6.22 mm--
BrandInfineon Technologies--
Fall Time39 ns--
Product TypeMOSFET--
Rise Time9 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time46 ns--
Typical Turn On Delay Time12 ns--
Part # AliasesIPD50P04P4L11ATMA1 IPD5P4P4L11XT SP000671156--
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPD50P04P4L-11 MOSFET P-Ch -40V -50A DPAK-2 OptiMOS-P2
IPD50P04P4L11ATMA1 MOSFET P-Ch -40V -50A DPAK-2 OptiMOS-P2
IPD50P04P4L11ATMA1 MOSFET P-CH 40V 50A TO252-3
IPD50P04P4L11ATMA1-CUT TAPE New and Original
IPD50P04P4L-11 . New and Original
IPD50P04P4L-11 Trans MOSFET P-CH 40V 50A 3-Pin TO-252 T/R (Alt: IPD50P04P4L-11)
IPD50P04P4L-11 4P04L11 New and Original
IPD50P04P4L11ATMA1INFINE New and Original
IPD50P04P4L11XT New and Original
Top