 | |  | |
| PartNumber | IPD50R520CPATMA1 | IPD50R520CP | IPD50R520CPBTMA1 |
| Description | MOSFET LOW POWER_LEGACY | MOSFET N-Ch 550V 7.1A DPAK-2 CoolMOS CP | LOW POWER_LEGACY |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Vds Drain Source Breakdown Voltage | 500 V | 500 V | - |
| Tradename | CoolMOS | CoolMOS | - |
| Packaging | Reel | Reel | - |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Series | CoolMOS CE | CoolMOS CE | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | IPD50R520CP SP001117706 | IPD50R520CPBTMA1 IPD5R52CPXT SP000307380 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Id Continuous Drain Current | - | 7.1 A | - |
| Rds On Drain Source Resistance | - | 520 mOhms | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 66 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 N-Channel | - |
| Fall Time | - | 17 ns | - |
| Rise Time | - | 14 ns | - |
| Typical Turn Off Delay Time | - | 80 ns | - |
| Typical Turn On Delay Time | - | 35 ns | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD50R520CPATMA1 | MOSFET LOW POWER_LEGACY | |
| IPD50R520CPATMA1 | LOW POWER_LEGACY | ||
| IPD50R520CPBTMA1 | LOW POWER_LEGACY | ||
| IPD50R520CP | MOSFET N-CH 550V 7.1A TO-252 | ||
Infineon Technologies |
IPD50R520CP | MOSFET N-Ch 550V 7.1A DPAK-2 CoolMOS CP |