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| PartNumber | IPD50R650CEBTMA1 | IPD50R650CEATMA1 | IPD50R650CEAUMA1 |
| Description | MOSFET N-Ch 500V 6.1A DPAK-2 | MOSFET N-Ch 550V 19A DPAK-2 | Trans MOSFET N-CH 500V 6.1A 3-Pin(2+Tab) DPAK T/R |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 500 V | 500 V | - |
| Id Continuous Drain Current | 9 A | 6.1 A | - |
| Rds On Drain Source Resistance | 590 mOhms | 650 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 3 V | - |
| Vgs Gate Source Voltage | 20 V | 30 V | - |
| Qg Gate Charge | 15 nC | 15 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 69 W | 47 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Tradename | CoolMOS | - | - |
| Packaging | Reel | Reel | - |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Series | IPD50R650 | XPD50R650 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 13 ns | 13 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 5 ns | 5 ns | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 27 ns | 27 ns | - |
| Typical Turn On Delay Time | 6 ns | 6 ns | - |
| Part # Aliases | IPD50R650CE SP000992078 | IPD50R650CEATMA1 SP001117708 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |