IPD7

IPD70R900P7SAUMA1 vs IPD75N04S4-06 vs IPD70R950CEAUMA1

 
PartNumberIPD70R900P7SAUMA1IPD75N04S4-06IPD70R950CEAUMA1
DescriptionMOSFETMOSFET N-Ch 40V 75A DPAK-2 OptiMOS-T2MOSFET CONSUMER
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3TO-252-3
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage700 V40 V700 V
Id Continuous Drain Current6 A75 A-
Rds On Drain Source Resistance740 mOhms5.9 mOhms-
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage16 V--
Qg Gate Charge6.8 nC--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation30.5 W--
ConfigurationSingleSingle-
Channel ModeEnhancement--
TradenameCoolMOSOptiMOSCoolMOS
PackagingReelReelReel
Height2.3 mm2.3 mm2.3 mm
Length6.5 mm6.5 mm6.5 mm
SeriesCoolMOS P7OptiMOS-T2CoolMOS CE
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm6.22 mm6.22 mm
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Fall Time31 ns--
Moisture SensitiveYes-Yes
Product TypeMOSFETMOSFETMOSFET
Rise Time4.7 ns--
Factory Pack Quantity250025002500
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time58 ns--
Typical Turn On Delay Time12 ns--
Part # AliasesIPD70R900P7S SP001491638IPD75N04S406ATMA1 IPD75N4S46XT SP000711472IPD70R950CE SP001466970
Unit Weight0.011993 oz0.139332 oz0.011993 oz
Qualification-AEC-Q101-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPD70R900P7SAUMA1 MOSFET
IPD75N04S4-06 MOSFET N-Ch 40V 75A DPAK-2 OptiMOS-T2
IPD78CN10NGATMA1 MOSFET MV POWER MOS
IPD70R950CEAUMA1 MOSFET CONSUMER
IPD70R900P7SAUMA1 MOSFET N-CH 700V 6A TO252-3
IPD70R950CEAUMA1 MOSFET N-CH 700V 7.4A TO252-3
IPD75N04S4-06 Trans MOSFET N-CH 40V 75A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD75N04S406ATMA1)
IPD75N04S406ATMA1 MOSFET N-CH 40V 75A TO252-3-313
IPD78CN10NGATMA1 MOSFET N-CH 100V 13A TO252-3
IPD78CN10NGBUMA1 MOSFET N-CH 100V 13A TO252-3
Infineon Technologies
Infineon Technologies
IPD78CN10NGBUMA1 MOSFET MV POWER MOS
IPD70R600P7SAUMA1-CUT TAPE New and Original
IPD70R900P7SAUMA1-CUT TAPE New and Original
IPD70R950CE N-CH 700V 7,4A 950mOhm TO252
IPD78CN10NG 78CN10N New and Original
IPD78CN10NGATMA1 , 2SD24 New and Original
IPD78CN10NGBUMA1 , 2SD24 New and Original
IPD78CN10NGXT New and Original
IPD7N60 New and Original
IPD78CN10N New and Original
IPD78CN10N G Trans MOSFET N-CH 100V 13A 3-Pin(2+Tab) TO-252
IPD78CN10NG Power Field-Effect Transistor, 13A I(D), 100V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
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