IPD70N10S

IPD70N10S3-12 vs IPD70N10S3L-12 vs IPD70N10S312ATMA1

 
PartNumberIPD70N10S3-12IPD70N10S3L-12IPD70N10S312ATMA1
DescriptionMOSFET N-Ch 100V 70A DPAK-2 OptiMOS-TMOSFET N-Ch 100V 70A DPAK-2 OptiMOS-TMOSFET N-CH 100V 70A TO252-3
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePG-TO-252-3PG-TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current70 A70 A-
Rds On Drain Source Resistance11.1 mOhms11.5 mOhms-
Vgs Gate Source Voltage10 V10 V-
Qg Gate Charge51 nC59 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation125 W125 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101AEC-Q101-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
SeriesOptiMOS-TOptiMOS-T-
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm6.22 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time8 ns7 ns-
Product TypeMOSFETMOSFET-
Rise Time8 ns6 ns-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time25 ns35 ns-
Typical Turn On Delay Time17 ns12 ns-
Part # AliasesIPD70N10S312ATMA1 IPD7N1S312XT SP000427248IPD70N10S3L12ATMA1 IPD7N1S3L12XT SP000261250-
Unit Weight0.139332 oz0.139332 oz-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPD70N10S3-12 MOSFET N-Ch 100V 70A DPAK-2 OptiMOS-T
IPD70N10S3L-12 MOSFET N-Ch 100V 70A DPAK-2 OptiMOS-T
IPD70N10S3L12ATMA1 MOSFET N-CH 100V 70A TO252-3
IPD70N10S312ATMA1 MOSFET N-CH 100V 70A TO252-3
Infineon Technologies
Infineon Technologies
IPD70N10S3L12ATMA1 MOSFET N-CHANNEL_100+
IPD70N10S3-12 MOSFET N-Ch 100V 70A DPAK-2 OptiMOS-T
IPD70N10S3-12 QN1012 New and Original
IPD70N10S312 New and Original
IPD70N10S3L-12 IGBT Transistors MOSFET N-Ch 100V 70A DPAK-2 OptiMOS-T
Top