PartNumber | IPD70N10S3-12 | IPD70N10S3L-12 | IPD70N10S312ATMA1 |
Description | MOSFET N-Ch 100V 70A DPAK-2 OptiMOS-T | MOSFET N-Ch 100V 70A DPAK-2 OptiMOS-T | MOSFET N-CH 100V 70A TO252-3 |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | PG-TO-252-3 | PG-TO-252-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
Id Continuous Drain Current | 70 A | 70 A | - |
Rds On Drain Source Resistance | 11.1 mOhms | 11.5 mOhms | - |
Vgs Gate Source Voltage | 10 V | 10 V | - |
Qg Gate Charge | 51 nC | 59 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 125 W | 125 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Tradename | OptiMOS | OptiMOS | - |
Packaging | Reel | Reel | - |
Height | 2.3 mm | 2.3 mm | - |
Length | 6.5 mm | 6.5 mm | - |
Series | OptiMOS-T | OptiMOS-T | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 6.22 mm | 6.22 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Fall Time | 8 ns | 7 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 8 ns | 6 ns | - |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 25 ns | 35 ns | - |
Typical Turn On Delay Time | 17 ns | 12 ns | - |
Part # Aliases | IPD70N10S312ATMA1 IPD7N1S312XT SP000427248 | IPD70N10S3L12ATMA1 IPD7N1S3L12XT SP000261250 | - |
Unit Weight | 0.139332 oz | 0.139332 oz | - |