PartNumber | IPD80R3K3P7ATMA1 | IPD80R360P7ATMA1 |
Description | MOSFET | MOSFET |
Manufacturer | Infineon | Infineon |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | DPAK-3 | DPAK-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 800 V | 800 V |
Id Continuous Drain Current | 1.9 A | 13 A |
Rds On Drain Source Resistance | 2.8 Ohms | 310 mOhms |
Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V |
Vgs Gate Source Voltage | 20 V | 20 V |
Qg Gate Charge | 5.8 nC | 30 nC |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 18 W | 84 W |
Configuration | Single | Single |
Channel Mode | Enhancement | Enhancement |
Tradename | CoolMOS | CoolMOS |
Packaging | Reel | Reel |
Series | CoolMOS P7 | CoolMOS P7 |
Transistor Type | 1 N-Channel | 1 N-Channel |
Brand | Infineon Technologies | Infineon Technologies |
Fall Time | 40 ns | 6 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 10 ns | 6 ns |
Factory Pack Quantity | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 40 ns | 40 ns |
Typical Turn On Delay Time | 12 ns | 10 ns |
Part # Aliases | IPD80R3K3P7 SP001636440 | IPD80R360P7 SP001633516 |