IPD90N04S3-0

IPD90N04S3-04 vs IPD90N04S3-04 QN0404 vs IPD90N04S3-04 QN0404 40

 
PartNumberIPD90N04S3-04IPD90N04S3-04 QN0404IPD90N04S3-04 QN0404 40
DescriptionMOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current90 A--
Rds On Drain Source Resistance3.8 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation136 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameOptiMOS--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
SeriesOptiMOS-T--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandInfineon Technologies--
Fall Time10 ns--
Product TypeMOSFET--
Rise Time13 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time30 ns--
Typical Turn On Delay Time20 ns--
Part # AliasesIPD90N04S304ATMA1 IPD9N4S34XT SP000261222--
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPD90N04S3-04 MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T
IPD90N04S3-04 QN0404 New and Original
IPD90N04S3-04 QN0404 40 New and Original
IPD90N04S3-04 QN0404 40V 90A New and Original
IPD90N04S3-04DKR New and Original
IPD90N04S3-04 MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T
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