IPD90N04S4L

IPD90N04S4L-04 vs IPD90N04S4L-04(1) vs IPD90N04S4L-04.

 
PartNumberIPD90N04S4L-04IPD90N04S4L-04(1)IPD90N04S4L-04.
DescriptionMOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current90 A--
Rds On Drain Source Resistance3.2 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage20 V, 16 V--
Qg Gate Charge60 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation71 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameOptiMOS--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
SeriesOptiMOS-T2--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandInfineon Technologies--
Fall Time28 ns--
Product TypeMOSFET--
Rise Time11 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time22 ns--
Typical Turn On Delay Time7 ns--
Part # AliasesIPD90N04S4L04ATMA1 IPD9N4S4L4XT SP000646188--
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPD90N04S4L-04 MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2
IPD90N04S4L04ATMA1 MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2
IPD90N04S4L04ATMA1 MOSFET N-CH 40V 90A TO252-3-313
IPD90N04S4L-04(1) New and Original
IPD90N04S4L-04. New and Original
IPD90N04S4L-04 RF Bipolar Transistors MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2
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