IPD90N1

IPD90N10S4L06ATMA1 vs IPD90N10S4L-06 vs IPD90N10S406ATMA1

 
PartNumberIPD90N10S4L06ATMA1IPD90N10S4L-06IPD90N10S406ATMA1
DescriptionMOSFET MOSFETMOSFET MOSFETMOSFET N-CHANNEL_100+
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3PG-TO-252-3TO-252-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current90 A90 A-
Rds On Drain Source Resistance5.8 mOhms6.6 mOhms-
Vgs th Gate Source Threshold Voltage1.1 V1.1 V-
Vgs Gate Source Voltage16 V10 V-
Qg Gate Charge98 nC75 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation136 W136 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101AEC-Q101AEC-Q101
PackagingReelReelReel
Height2.3 mm2.3 mm2.3 mm
Length6.5 mm6.5 mm6.5 mm
SeriesIPD90N10XPD90N10-
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width6.22 mm6.22 mm6.22 mm
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Fall Time40 ns40 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time6 ns6 ns-
Factory Pack Quantity250025002500
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time42 ns42 ns-
Typical Turn On Delay Time8 ns8 ns-
Part # AliasesIPD90N10S4L-06 SP000866562IPD90N10S4L06ATMA1 SP000866562IPD90N10S4-06 SP001101896
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPD90N10S4L06ATMA1 MOSFET MOSFET
IPD90N10S4L-06 MOSFET MOSFET
IPD90N10S406ATMA1 MOSFET N-CHANNEL_100+
IPD90N10S406ATMA1 MOSFET N-CH TO252-3
IPD90N10S4L06ATMA1 MOSFET N-CH TO252-3
IPD90N10S4L-06 MOSFET MOSFET
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