IPDD60R1

IPDD60R125G7XTMA1 vs IPDD60R150G7XTMA1 vs IPDD60R102G7XTMA1

 
PartNumberIPDD60R125G7XTMA1IPDD60R150G7XTMA1IPDD60R102G7XTMA1
DescriptionMOSFET HIGH POWER_NEWMOSFET HIGH POWER_NEWMOSFET HIGH POWER_NEW
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePG-HDSOP-10PG-HDSOP-10PG-HDSOP-10
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V600 V600 V
Id Continuous Drain Current20 A16 A23 A
Rds On Drain Source Resistance125 mOhms150 mOhms102 mOhms
Vgs th Gate Source Threshold Voltage3 V3 V3 V
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge27 nC23 nC34 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation120 W95 W139 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Fall Time5 ns6 ns4 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time5 ns5 ns5 ns
Factory Pack Quantity170017001700
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time60 ns56 ns60 ns
Typical Turn On Delay Time18 ns17 ns18 ns
Part # AliasesIPDD60R125G7 SP001632876IPDD60R150G7 SP001632838IPDD60R102G7 SP001632832
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPDD60R125G7XTMA1 MOSFET HIGH POWER_NEW
IPDD60R190G7XTMA1 MOSFET HIGH POWER_NEW
IPDD60R150G7XTMA1 MOSFET HIGH POWER_NEW
IPDD60R102G7XTMA1 MOSFET NCH 650V 66A PG-HDSOP-10
IPDD60R125G7XTMA1 MOSFET NCH 650V 54A PG-HDSOP-10
IPDD60R150G7XTMA1 MOSFET NCH 650V 45A PG-HDSOP-10
IPDD60R190G7XTMA1 MOSFET NCH 650V 36A PG-HDSOP-10
Infineon Technologies
Infineon Technologies
IPDD60R102G7XTMA1 MOSFET HIGH POWER_NEW
IPDD60R102G7XTMA1-CUT TAPE New and Original
IPDD60R125G7XTMA1-CUT TAPE New and Original
IPDD60R150G7XTMA1-CUT TAPE New and Original
IPDD60R190G7XTMA1-CUT TAPE New and Original
Top