PartNumber | IPDD60R125G7XTMA1 | IPDD60R150G7XTMA1 | IPDD60R102G7XTMA1 |
Description | MOSFET HIGH POWER_NEW | MOSFET HIGH POWER_NEW | MOSFET HIGH POWER_NEW |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PG-HDSOP-10 | PG-HDSOP-10 | PG-HDSOP-10 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
Id Continuous Drain Current | 20 A | 16 A | 23 A |
Rds On Drain Source Resistance | 125 mOhms | 150 mOhms | 102 mOhms |
Vgs th Gate Source Threshold Voltage | 3 V | 3 V | 3 V |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 27 nC | 23 nC | 34 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 120 W | 95 W | 139 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Reel |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 5 ns | 6 ns | 4 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 5 ns | 5 ns | 5 ns |
Factory Pack Quantity | 1700 | 1700 | 1700 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 60 ns | 56 ns | 60 ns |
Typical Turn On Delay Time | 18 ns | 17 ns | 18 ns |
Part # Aliases | IPDD60R125G7 SP001632876 | IPDD60R150G7 SP001632838 | IPDD60R102G7 SP001632832 |