PartNumber | IPG20N04S4-09 | IPG20N04S4-08 | IPG20N04S4-12 |
Description | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TDSON-8 | TDSON-8 | TDSON-8 |
Number of Channels | 2 Channel | 2 Channel | 2 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 40 V | 40 V | 40 V |
Id Continuous Drain Current | 20 A | 20 A | 20 A |
Rds On Drain Source Resistance | 7.9 mOhms, 7.9 mOhms | 7.6 mOhms | 12.2 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | - | - |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 28 nC, 28 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 54 W | 65 W | 41 W |
Configuration | Dual | Dual | Dual |
Channel Mode | Enhancement | - | - |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Tradename | OptiMOS | OptiMOS | OptiMOS |
Packaging | Reel | Reel | Reel |
Height | 1.27 mm | 1.27 mm | 1.27 mm |
Length | 5.9 mm | 5.9 mm | 5.9 mm |
Series | OptiMOS-T2 | OptiMOS-T2 | OptiMOS-T2 |
Transistor Type | 2 N-Channel | 2 N-Channel | 2 N-Channel |
Width | 5.15 mm | 5.15 mm | 5.15 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 10 ns, 10 ns | - | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 3 ns, 3 ns | - | - |
Factory Pack Quantity | 5000 | 5000 | 5000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 15 ns, 15 ns | - | - |
Typical Turn On Delay Time | 12 ns, 12 ns | - | - |
Part # Aliases | IPG20N04S409ATMA1 IPG2N4S49XT SP000705570 | IPG20N04S408ATMA1 IPG2N4S48XT SP000705582 | IPG20N04S412ATMA1 IPG2N4S412XT SP000705560 |
Unit Weight | - | 0.007055 oz | - |