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| PartNumber | IPI147N12N3 G | IPI147N12N3GAKSA1 | IPI147N12N3G |
| Description | MOSFET N-Ch 120V 56A I2PAK-3 OptiMOS 3 | MOSFET N-CH 120V 56A TO262-3 | Power Field-Effect Transistor, 56A I(D), 120V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-262-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 120 V | - | - |
| Id Continuous Drain Current | 56 A | - | - |
| Rds On Drain Source Resistance | 14.7 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 37 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 107 W | - | - |
| Configuration | Single | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Tube | - | - |
| Height | 9.45 mm | - | - |
| Length | 10.2 mm | - | - |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 4 nS | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 9 nS | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 24 nS | - | - |
| Part # Aliases | IPI147N12N3GAKSA1 IPI147N12N3GXK SP000652744 | - | - |
| Unit Weight | 0.084199 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPI147N12N3 G | MOSFET N-Ch 120V 56A I2PAK-3 OptiMOS 3 | |
| IPI147N12N3GAKSA1 | MOSFET N-CH 120V 56A TO262-3 | ||
| IPI147N12N3G | Power Field-Effect Transistor, 56A I(D), 120V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | ||
| IPI147N12N3 G | Darlington Transistors MOSFET N-Ch 120V 56A I2PAK-3 OptiMOS 3 |