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| PartNumber | IPI50R250CPXKSA1 | IPI50R250CPPB-FREE | IPI50R250CP |
| Description | MOSFET LOW POWER_LEGACY | RF Bipolar Transistors MOSFET N-Ch 550V 13A I2PAK-3 CoolMOS CP | |
| Manufacturer | Infineon | - | INF |
| Product Category | MOSFET | - | FETs - Single |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | - | Through Hole |
| Package / Case | TO-262-3 | - | - |
| Tradename | CoolMOS | - | CoolMOS |
| Packaging | Tube | - | Tube |
| Height | 9.45 mm | - | - |
| Length | 10.2 mm | - | - |
| Width | 4.5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Product Type | MOSFET | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | IPI50R250CPXKSA1 SP000523750 | - | - |
| Unit Weight | 0.084199 oz | - | 0.084199 oz |
| Series | - | - | CoolMOS CP |
| Part Aliases | - | - | IPI50R250CPXK IPI50R250CPXKSA1 SP000523750 |
| Package Case | - | - | I2PAK-3 |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 114 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 11 ns |
| Rise Time | - | - | 14 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 13 A |
| Vds Drain Source Breakdown Voltage | - | - | 550 V |
| Rds On Drain Source Resistance | - | - | 250 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 80 nS |
| Qg Gate Charge | - | - | 27 nC |