IPI600N25

IPI600N25N3 G vs IPI600N25N3 vs IPI600N25N3G

 
PartNumberIPI600N25N3 GIPI600N25N3IPI600N25N3G
DescriptionMOSFET N-Ch 250V 25A I2PAK-3 OptiMOS 3Trans MOSFET N-CH 250V 25A 3-Pin TO-262 Tube - Bulk (Alt: IPI600N25N3G)
ManufacturerInfineonInfineon Technologies-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-262-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage250 V--
Id Continuous Drain Current25 A--
Rds On Drain Source Resistance60 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge22 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation136 W--
ConfigurationSingleSingle-
TradenameOptiMOSOptiMOS-
PackagingTubeTube-
Height9.45 mm--
Length10.2 mm--
SeriesOptiMOS 3OptiMOS 3-
Transistor Type1 N-Channel1 N-Channel-
Width4.5 mm--
BrandInfineon Technologies--
Fall Time8 nS8 ns-
Product TypeMOSFET--
Rise Time10 ns10 ns-
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time22 nS22 nS-
Part # AliasesIPI600N25N3GAKSA1 IPI6N25N3GXK SP000714316--
Unit Weight0.084199 oz0.084199 oz-
Part Aliases-IPI600N25N3GAKSA1 IPI600N25N3GXK SP000714316-
Package Case-I2PAK-3-
Pd Power Dissipation-136 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-25 A-
Vds Drain Source Breakdown Voltage-250 V-
Rds On Drain Source Resistance-60 mOhms-
Qg Gate Charge-22 nC-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPI600N25N3 G MOSFET N-Ch 250V 25A I2PAK-3 OptiMOS 3
IPI600N25N3GAKSA1 MOSFET N-CH 250V 25A TO262-3
Infineon Technologies
Infineon Technologies
IPI600N25N3GAKSA1 MOSFET MV POWER MOS
IPI600N25N3 New and Original
IPI600N25N3G Trans MOSFET N-CH 250V 25A 3-Pin TO-262 Tube - Bulk (Alt: IPI600N25N3G)
IPI600N25N3 G Darlington Transistors MOSFET N-Ch 250V 25A I2PAK-3 OptiMOS 3
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