IPI60R2

IPI60R280C6 vs IPI60R250CPAKSA1 vs IPI60R280C6XKSA1

 
PartNumberIPI60R280C6IPI60R250CPAKSA1IPI60R280C6XKSA1
DescriptionMOSFET N-Ch 650V 13.8A I2PAK-3 CoolMOS C6MOSFET N-Ch 650V 12A I2PAK-3MOSFET N-CH 600V 13.8A TO262
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-262-3TO-262-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage650 V650 V-
Id Continuous Drain Current13.8 A12 A-
Rds On Drain Source Resistance280 mOhms250 mOhms-
Vgs Gate Source Voltage20 V30 V-
Qg Gate Charge43 nC26 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation104 W104 W-
ConfigurationSingleSingle-
TradenameCoolMOSCoolMOS-
PackagingTubeTube-
Height9.45 mm9.45 mm-
Length10.2 mm10.2 mm-
SeriesCoolMOS C6XPI60R250-
Transistor Type1 N-Channel1 N-Channel-
Width4.5 mm4.5 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time12 nS12 ns-
Product TypeMOSFETMOSFET-
Rise Time11 ns17 ns-
Factory Pack Quantity500500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time100 nS110 ns-
Part # AliasesIPI60R280C6XKSA1 IPI6R28C6XK SP000687554IPI60R250CP SP000358141-
Unit Weight0.084199 oz0.073511 oz-
Vgs th Gate Source Threshold Voltage-3 V-
Typical Turn On Delay Time-40 ns-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPI60R280C6 MOSFET N-Ch 650V 13.8A I2PAK-3 CoolMOS C6
IPI60R280C6XKSA1 MOSFET N-CH 600V 13.8A TO262
IPI60R299CPXKSA1 MOSFET N-CH 600V 11A I2PAK
IPI60R250CPAKSA1 MOSFET N-Ch 650V 12A I2PAK-3
Infineon Technologies
Infineon Technologies
IPI60R250CPAKSA1 MOSFET N-Ch 650V 12A I2PAK-3
IPI60R250CP Trans MOSFET N-CH 600V 12A 3-Pin TO-262 Tube - Bulk (Alt: IPI60R250CP)
IPI60R299CP-6R299P New and Original
IPI60R280C6 IGBT Transistors MOSFET N-Ch 650V 13.8A I2PAK-3 CoolMOS C6
IPI60R299CP RF Bipolar Transistors MOSFET N-Ch 650V 11A I2PAK-3 CoolMOS CP
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