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| PartNumber | IPI90R1K2C3 | IPI90R1K2C3 , 2SD2457 | IPI90R1K2C3(1) |
| Description | MOSFET N-Ch 900V 5.1A I2PAK-3 CoolMOS C3 | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-262-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 900 V | - | - |
| Id Continuous Drain Current | 5.1 A | - | - |
| Rds On Drain Source Resistance | 1.2 Ohms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 83 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | CoolMOS | - | - |
| Packaging | Tube | - | - |
| Height | 9.45 mm | - | - |
| Length | 10.2 mm | - | - |
| Series | CoolMOS C3 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 40 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 20 ns | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 400 ns | - | - |
| Typical Turn On Delay Time | 70 ns | - | - |
| Part # Aliases | IPI90R1K2C3XKSA1 IPI9R1K2C3XK SP000683080 | - | - |
| Unit Weight | 0.084199 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPI90R1K2C3 | MOSFET N-Ch 900V 5.1A I2PAK-3 CoolMOS C3 | |
| IPI90R1K2C3XKSA2 | MOSFET | ||
| IPI90R1K2C3XKSA1 | MOSFET N-CH 900V 5.1A TO-262 | ||
| IPI90R1K2C3XK | Trans MOSFET N-CH 900V 5.1A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI90R1K2C3XKSA1) | ||
| IPI90R1K2C3 , 2SD2457 | New and Original | ||
| IPI90R1K2C3(1) | New and Original | ||
| IPI90R1K2C3 | Darlington Transistors MOSFET N-Ch 900V 5.1A I2PAK-3 CoolMOS C3 |