PartNumber | IPN70R1K4P7SATMA1 | IPN70R1K0CEATMA1 | IPN70R1K2P7SATMA1 |
Description | MOSFET CONSUMER | MOSFET | COOLMOS P7 700V SOT-223 |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | PG-SOT-223-3 | SOT-223-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 700 V | 700 V | - |
Id Continuous Drain Current | 4 A | 7.4 A | - |
Rds On Drain Source Resistance | 1.15 Ohms | 900 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V | - |
Vgs Gate Source Voltage | 16 V | 20 V | - |
Qg Gate Charge | 4.7 nC | 14.9 nC | - |
Minimum Operating Temperature | - 40 C | - 40 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 6.2 W | 5 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | CoolMOS | - | - |
Packaging | Reel | Reel | - |
Series | CoolMOS P7 | CoolMOS CE | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Fall Time | 61 ns | 13.6 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 4.9 ns | 5.2 ns | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 63 ns | 41 ns | - |
Typical Turn On Delay Time | 12 ns | 6.6 ns | - |
Part # Aliases | IPN70R1K4P7S SP001657492 | IPN70R1K0CE SP001646912 | - |
Unit Weight | - | 0.004134 oz | - |