PartNumber | IPN95R1K2P7ATMA1 | IPN95R2K0P7ATMA1 | IPN95R3K7P7ATMA1 |
Description | MOSFET 950 V CoolMOS P7 | MOSFET 950 V CoolMOS P7 | MOSFET 950 V CoolMOS P7 |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-223-3 | SOT-223-3 | SOT-223-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 950 V | 950 V | 950 V |
Id Continuous Drain Current | 6 A | 4 A | 2 A |
Rds On Drain Source Resistance | 1.2 Ohms | 2 Ohms | 3.7 Ohms |
Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V | 2.5 V |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 15 nC | 10 nC | 6 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 7 W | 7 W | 6 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | CoolMOS | CoolMOS | CoolMOS |
Packaging | Reel | Reel | Reel |
Series | P7 | P7 | P7 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 12 ns | 18 ns | 40 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 10 ns | 13 ns | 23 ns |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 36 ns | 41 ns | 46 ns |
Typical Turn On Delay Time | 7 ns | 6 ns | 7 ns |
Part # Aliases | IPN95R1K2P7 | IPN95R2K0P7 | IPN95R3K7P7 |