IPP028

IPP028N08N3 G vs IPP028N08N3 vs IPP028N08N3G

 
PartNumberIPP028N08N3 GIPP028N08N3IPP028N08N3G
DescriptionMOSFET N-Ch 80V 100A TO220-3 OptiMOS 3100 A, 80 V, 0.0028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
ManufacturerInfineonINFINEONINFINEO
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage80 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance2.8 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation300 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingTubeTube-
Height15.65 mm--
Length10 mm--
SeriesOptiMOS 3OptiMOS 3-
Transistor Type1 N-Channel1 N-Channel-
Width4.4 mm--
BrandInfineon Technologies--
Fall Time33 ns33 ns-
Product TypeMOSFET--
Rise Time73 ns73 ns-
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time86 ns86 ns-
Typical Turn On Delay Time28 ns28 ns-
Part # AliasesIPP028N08N3GXKSA1 IPP28N8N3GXK SP000680766--
Unit Weight0.211644 oz0.211644 oz-
Part Aliases-IPP028N08N3GXK IPP028N08N3GXKSA1 SP000680766-
Package Case-TO-220-3-
Pd Power Dissipation-300 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-100 A-
Vds Drain Source Breakdown Voltage-80 V-
Rds On Drain Source Resistance-2.8 mOhms-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPP028N08N3 G MOSFET N-Ch 80V 100A TO220-3 OptiMOS 3
IPP028N08N3GXKSA1 MOSFET N-CH 80V 100A TO220-3
Infineon Technologies
Infineon Technologies
IPP028N08N3GXKSA1 MOSFET MV POWER MOS
IPP028N08N3 New and Original
IPP028N08N3G 100 A, 80 V, 0.0028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IPP028N08N3 G Darlington Transistors MOSFET N-Ch 80V 100A TO220-3 OptiMOS 3
IPP028N08N3GHKSA1 MOSFET N-Ch 80V 100A TO220-3
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