IPP041N0

IPP041N04N G vs IPP041N04N vs IPP041N04N G(SP00068079

 
PartNumberIPP041N04N GIPP041N04NIPP041N04N G(SP00068079
DescriptionMOSFET N-Ch 40V 80A TO220-3 OptiMOS 3
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current80 A--
Rds On Drain Source Resistance4.1 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation94 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingTube--
Height15.65 mm--
Length10 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width4.4 mm--
BrandInfineon Technologies--
Fall Time4.8 ns--
Product TypeMOSFET--
Rise Time3.8 ns--
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time23 ns--
Typical Turn On Delay Time16 ns--
Part # AliasesIPP041N04NGXKSA1 IPP41N4NGXK SP000680790--
Unit Weight0.211644 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPP041N04N G MOSFET N-Ch 40V 80A TO220-3 OptiMOS 3
IPP041N04NGXKSA1 MOSFET N-CH 40V 80A TO220-3
Infineon Technologies
Infineon Technologies
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