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| PartNumber | IPP06CN10 | IPP06CN10LG | IPP06CN10L G |
| Description | Power Field-Effect Transistor, 100A I(D), 100V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IGBT Transistors MOSFET N-Ch 100V 100A TO220-3 | |
| Manufacturer | - | - | Infineon Technologies |
| Product Category | - | - | Transistors - FETs, MOSFETs - Single |
| Series | - | - | IPP06CN10 |
| Packaging | - | - | Tube |
| Part Aliases | - | - | IPP06CN10LGXKSA1 |
| Unit Weight | - | - | 0.211644 oz |
| Mounting Style | - | - | Through Hole |
| Package Case | - | - | TO-220-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 214 W |
| Maximum Operating Temperature | - | - | + 175 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 7 ns |
| Rise Time | - | - | 27 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 100 A |
| Vds Drain Source Breakdown Voltage | - | - | 100 V |
| Rds On Drain Source Resistance | - | - | 6.2 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 26 ns |
| Typical Turn On Delay Time | - | - | 17 ns |
| Channel Mode | - | - | Enhancement |