PartNumber | IPP072N10N3GXK | IPP072N10N3 G | IPP072N10N3GHKSA1 |
Description | MOSFET N-Ch 100V 80A TO220-3 OptiMOS 3 | MOSFET N-Ch 100V 80A TO220-3 OptiMOS 3 | MOSFET N-Ch 80V 80A TO220-3 |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 100 V | 80 V |
Id Continuous Drain Current | 80 A | 80 A | 80 A |
Rds On Drain Source Resistance | 6.2 mOhms | 6.2 mOhms | 7.2 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 68 nC | 68 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 150 W | 150 W | - |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Tube | Tube | Tube |
Height | 15.65 mm | 15.65 mm | 15.65 mm |
Length | 10 mm | 10 mm | 10 mm |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 4.4 mm | 4.4 mm | 4.4 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Forward Transconductance Min | 50 S | 50 S | - |
Fall Time | 9 ns | 9 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 37 ns | 37 ns | - |
Factory Pack Quantity | 500 | 500 | 500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 37 ns | 37 ns | - |
Typical Turn On Delay Time | 19 ns | 19 ns | - |
Part # Aliases | G IPP072N10N3 IPP072N10N3GXKSA1 SP000680830 | IPP072N10N3GXKSA1 IPP72N1N3GXK SP000680830 | G IPP072N10N3 IPP072N10N3GXK SP000469896 |
Unit Weight | 0.063493 oz | 0.211644 oz | 0.211644 oz |
Tradename | - | OptiMOS | OptiMOS |
Series | - | OptiMOS 3 | - |