IPP076

IPP076N12N3 G vs IPP076N15N5AKSA1 vs IPP076N12N3GXKSA1

 
PartNumberIPP076N12N3 GIPP076N15N5AKSA1IPP076N12N3GXKSA1
DescriptionMOSFET N-Ch 120V 100A TO220-3 OptiMOS 3MOSFETMOSFET MV POWER MOS
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3TO-220-3
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage120 V150 V-
Id Continuous Drain Current100 A112 A-
Rds On Drain Source Resistance7.6 mOhms5.9 mOhms-
Vgs th Gate Source Threshold Voltage3 V3 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge76 nC61 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation188 W214 W-
ConfigurationSingleSingle-
TradenameOptiMOSOptiMOSOptiMOS
PackagingTubeTubeTube
Height15.65 mm15.65 mm15.65 mm
Length10 mm10 mm10 mm
SeriesOptiMOS 3OptiMOS 5-
Transistor Type1 N-Channel1 N-Channel-
TypeOptiMOS 3 Power-Transistor--
Width4.4 mm4.4 mm4.4 mm
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Forward Transconductance Min116 S, 58 S45 S-
Fall Time10 ns4 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time50 ns4 ns-
Factory Pack Quantity500500-
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time39 ns20 ns-
Typical Turn On Delay Time24 ns14 ns-
Part # AliasesIPP076N12N3GXKSA1 IPP76N12N3GXK SP000652736IPP076N15N5 SP001180658G IPP076N12N3 IPP76N12N3GXK SP000652736
Unit Weight0.211644 oz0.063493 oz0.211644 oz
Channel Mode-Enhancement-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPP076N12N3 G MOSFET N-Ch 120V 100A TO220-3 OptiMOS 3
IPP076N15N5AKSA1 MOSFET
IPP076N15N5AKSA1 MV POWER MOS
IPP076N12N3GXKSA1 MOSFET N-CH 120V 100A TO220-3
Infineon Technologies
Infineon Technologies
IPP076N12N3GXKSA1 MOSFET MV POWER MOS
IPP076N15N5 MOSFETs
IPP076N12N3GXK Trans MOSFET N-CH 120V 100A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: IPP076N12N3GXKSA1)
IPP076N12N New and Original
IPP076N12N3 New and Original
IPP076N12N3 G(SP00065273 New and Original
IPP076N12N3G Power Field-Effect Transistor, 100A I(D), 120V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IPP076N12N3G , 2SD780-DW New and Original
IPP076N12N3G,076N12N New and Original
IPP076N12N3GS New and Original
IPP076N12N3 G IGBT Transistors MOSFET N-Ch 120V 100A TO220-3 OptiMOS 3
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