PartNumber | IPP076N12N3 G | IPP076N12N | IPP076N12N3 |
Description | MOSFET N-Ch 120V 100A TO220-3 OptiMOS 3 | ||
Manufacturer | Infineon | Infineon Technologies | Infineon Technologies |
Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
RoHS | Y | - | - |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | - | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 120 V | - | - |
Id Continuous Drain Current | 100 A | - | - |
Rds On Drain Source Resistance | 7.6 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 3 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 76 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 188 W | - | - |
Configuration | Single | - | - |
Tradename | OptiMOS | OptiMOS | OptiMOS |
Packaging | Tube | Tube | Tube |
Height | 15.65 mm | - | - |
Length | 10 mm | - | - |
Series | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Type | OptiMOS 3 Power-Transistor | - | - |
Width | 4.4 mm | - | - |
Brand | Infineon Technologies | - | - |
Forward Transconductance Min | 116 S, 58 S | - | - |
Fall Time | 10 ns | 10 ns | 10 ns |
Product Type | MOSFET | - | - |
Rise Time | 50 ns | 50 ns | 50 ns |
Factory Pack Quantity | 500 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 39 ns | 39 ns | 39 ns |
Typical Turn On Delay Time | 24 ns | 24 ns | 24 ns |
Part # Aliases | IPP076N12N3GXKSA1 IPP76N12N3GXK SP000652736 | - | - |
Unit Weight | 0.211644 oz | 0.211644 oz | 0.211644 oz |
Part Aliases | - | IPP076N12N3GXK IPP076N12N3GXKSA1 SP000652736 | IPP076N12N3GXK IPP076N12N3GXKSA1 SP000652736 |
Package Case | - | TO-220-3 | TO-220-3 |
Pd Power Dissipation | - | 188 W | 188 W |
Vgs Gate Source Voltage | - | 20 V | 20 V |
Id Continuous Drain Current | - | 100 A | 100 A |
Vds Drain Source Breakdown Voltage | - | 120 V | 120 V |
Vgs th Gate Source Threshold Voltage | - | 3 V | 3 V |
Rds On Drain Source Resistance | - | 7.6 mOhms | 7.6 mOhms |
Qg Gate Charge | - | 76 nC | 76 nC |
Forward Transconductance Min | - | 116 S 58 S | 116 S 58 S |