IPP100P

IPP100P03P3L-04 vs IPP100P03P3L-04(3P03L04) vs IPP100P03P3L04

 
PartNumberIPP100P03P3L-04IPP100P03P3L-04(3P03L04)IPP100P03P3L04
DescriptionMOSFET P-Ch -30V -100A TO220-3 OptiMOS-P
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance4 mOhms--
Vgs Gate Source Voltage5 V, - 16 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation200 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingTube--
Height15.65 mm--
Length10 mm--
SeriesOptiMOS-P--
Transistor Type1 N-Channel--
Width4.4 mm--
BrandInfineon Technologies--
Fall Time180 ns--
Product TypeMOSFET--
Rise Time45 ns--
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time200 ns--
Typical Turn On Delay Time30 ns--
Unit Weight0.211644 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPP100P03P3L-04 MOSFET P-Ch -30V -100A TO220-3 OptiMOS-P
Infineon Technologies
Infineon Technologies
IPP100P03P3L-04 MOSFET P-CH 30V 100A TO220-3
IPP100P03P3L-04(3P03L04) New and Original
IPP100P03P3L04 New and Original
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