 |  | | |
| PartNumber | IPP111N15N3 G | IPP111N15N3 | IPP111N15N3G |
| Description | MOSFET N-Ch 150V 83A TO220-3 OptiMOS 3 | ||
| Manufacturer | Infineon | infineo | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 150 V | - | - |
| Id Continuous Drain Current | 83 A | - | - |
| Rds On Drain Source Resistance | 9.4 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 55 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 214 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Tube | Tube | - |
| Height | 15.65 mm | - | - |
| Length | 10 mm | - | - |
| Series | OptiMOS 3 | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 4.4 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 47 S | - | - |
| Fall Time | 9 ns | 9 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 35 ns | 35 ns | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 32 ns | 32 nS | - |
| Typical Turn On Delay Time | 17 ns | - | - |
| Part # Aliases | IPP111N15N3GXK IPP111N15N3GXKSA1 SP000677860 | - | - |
| Unit Weight | 0.211644 oz | 0.211644 oz | - |
| Part Aliases | - | IPP111N15N3GXK IPP111N15N3GXKSA1 SP000677860 | - |
| Package Case | - | TO-220-3 | - |
| Pd Power Dissipation | - | 214 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 83 A | - |
| Vds Drain Source Breakdown Voltage | - | 150 V | - |
| Rds On Drain Source Resistance | - | 10.8 mOhms | - |
| Qg Gate Charge | - | 41 nC | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP111N15N3GXKSA1 | MOSFET N-Ch 150V 83A TO220-3 OptiMOS 3 | |
| IPP111N15N3 G | MOSFET N-Ch 150V 83A TO220-3 OptiMOS 3 | ||
| IPP111N15N3GXKSA1 | MOSFET N-CH 150V 83A TO220-3 | ||
| IPP111N15N3 | New and Original | ||
| IPP111N15N3G | New and Original | ||
| IPP111N15N3G 111N15N | New and Original | ||
| IPP111N15N3GXKSA1 , 2SD8 | New and Original | ||
| IPP111N15N3 G | IGBT Transistors MOSFET N-Ch 150V 83A TO220-3 OptiMOS 3 |