![]() | |||
| PartNumber | IPP120P04P4L-03 | IPP120P04P4L03AKSA1 | IPP120P04P4L-03 4PP04L03 |
| Description | MOSFET P-Ch -40V -120A TO220-3 OptiMOS-P2 | MOSFET P-Ch -40V -120A TO220-3 OptiMOS-P2 | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
| Id Continuous Drain Current | 120 A | 120 A | - |
| Rds On Drain Source Resistance | 5.2 mOhms | 2.9 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 2.2 V | - |
| Vgs Gate Source Voltage | 4.5 V | 16 V | - |
| Qg Gate Charge | 180 nC | 234 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 136 W | 136 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | OptiMOS | - | - |
| Packaging | Tube | Tube | - |
| Height | 15.65 mm | 15.65 mm | - |
| Length | 10 mm | 10 mm | - |
| Series | OptiMOS-P2 | XPP120P04 | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Width | 4.4 mm | 4.4 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 57 ns | 57 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 16 ns | 16 ns | - |
| Factory Pack Quantity | 500 | 500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 85 ns | 85 ns | - |
| Typical Turn On Delay Time | 21 ns | 21 ns | - |
| Part # Aliases | IPP120P04P4L03AKSA1 IPP12P4P4L3XK SP000842300 | IPP120P04P4L-03 IPP12P4P4L3XK SP000842300 | - |
| Unit Weight | 0.211644 oz | 0.211644 oz | - |