IPP14

IPP147N12N3 G vs IPP147N12N3GXKSA1 vs IPP147N03L G

 
PartNumberIPP147N12N3 GIPP147N12N3GXKSA1IPP147N03L G
DescriptionMOSFET N-Ch 120V 56A TO220-3 OptiMOS 3MOSFET MV POWER MOSMOSFET N-Ch 30V 20A TO220-3 OptiMOS 3
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSY-Y
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3TO-220-3
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage120 V-30 V
Id Continuous Drain Current56 A-20 A
Rds On Drain Source Resistance14.7 mOhms-14.7 mOhms
Vgs Gate Source Voltage20 V-20 V
Qg Gate Charge37 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation107 W-31 W
ConfigurationSingle-Single
TradenameOptiMOSOptiMOSOptiMOS
PackagingTubeTubeTube
Height15.65 mm15.65 mm15.65 mm
Length10 mm10 mm10 mm
SeriesOptiMOS 3--
Transistor Type1 N-Channel-1 N-Channel
Width4.4 mm4.4 mm4.4 mm
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Fall Time4 nS-2 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time9 nS-2.4 ns
Factory Pack Quantity500-500
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time24 nS-12 ns
Part # AliasesIPP147N12N3GXK IPP147N12N3GXKSA1 SP000652742G IPP147N12N3 IPP147N12N3GXK SP000652742IPP147N03LGHKSA1 SP000266315
Unit Weight0.084199 oz0.211644 oz0.211644 oz
Channel Mode--Enhancement
Typical Turn On Delay Time--3.1 ns
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPP147N12N3 G MOSFET N-Ch 120V 56A TO220-3 OptiMOS 3
IPP147N03L G MOSFET N-CH 30V 20A TO-220-3
IPP147N12N3GXKSA1 MOSFET N-CH 120V 56A TO220-3
IPP14N03LA MOSFET N-CH 25V 30A TO-220AB
Infineon Technologies
Infineon Technologies
IPP147N12N3GXKSA1 MOSFET MV POWER MOS
IPP147N03L G MOSFET N-Ch 30V 20A TO220-3 OptiMOS 3
IPP147N12N3GXK Trans MOSFET N-CH 120V 56A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: IPP147N12N3GXKSA1)
IPP147N03LG Power Field-Effect Transistor, 20AI(D),30V,0.0217ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET,TO-220AB
IPP147N03LG,147N03L New and Original
IPP147N03LGHKSA1 New and Original
IPP147N03LGS New and Original
IPP147N12N New and Original
IPP147N12N3G Power Field-Effect Transistor, 56A I(D), 120V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IPP147N12N3G(147N12) New and Original
IPP147N12N3G,147N12N New and Original
IPP147N12N3 G Darlington Transistors MOSFET N-Ch 120V 56A TO220-3 OptiMOS 3
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