IPP16CN1

IPP16CN10N G vs IPP16CN10NGHKSA1 vs IPP16CN10LGXKSA1

 
PartNumberIPP16CN10N GIPP16CN10NGHKSA1IPP16CN10LGXKSA1
DescriptionMOSFET N-Ch 100V 53A TO220-3 OptiMOS 2MOSFET N-CH 100V TO-220MOSFET N-CH 100V 54A TO220-3
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current53 A--
Rds On Drain Source Resistance16.5 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation100 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingTube--
Height15.65 mm--
Length10 mm--
SeriesOptiMOS 2--
Transistor Type1 N-Channel--
Width4.4 mm--
BrandInfineon Technologies--
Fall Time7 ns--
Product TypeMOSFET--
Rise Time14 ns--
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time27 ns--
Typical Turn On Delay Time15 ns--
Part # AliasesIPP16CN10NGHKSA1 IPP16CN1NGXK SP000096469--
Unit Weight0.211644 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPP16CN10NGXKSA1 MOSFET N-Ch 100V 53A TO220-3
IPP16CN10N G MOSFET N-Ch 100V 53A TO220-3 OptiMOS 2
IPP16CN10NGHKSA1 MOSFET N-CH 100V TO-220
IPP16CN10LGXKSA1 MOSFET N-CH 100V 54A TO220-3
IPP16CN10NGXKSA1 MOSFET N-Ch 100V 53A TO220-3
IPP16CN10NG Power Field-Effect Transistor, 53A I(D), 100V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IPP16CN10L New and Original
IPP16CN10LG New and Original
IPP16CN10N New and Original
IPP16CN10NG HF New and Original
IPP16CN10NG(16CN10N) New and Original
IPP16CN10NG,16CN10N New and Original
IPP16CN10NG,IPP16CN10N,1 New and Original
IPP16CN10NGHKSA1 , 2SD87 New and Original
IPP16CN10NGXKSA1 , 2SD88 New and Original
IPP16CN10N G MOSFET N-Ch 100V 53A TO220-3 OptiMOS 2
Top