 |  | | |
| PartNumber | IPP200N25N3 G | IPP200N25N3G | IPP200N25N3 |
| Description | MOSFET N-Ch 250V 64A TO220-3 OptiMOS 3 | POWER FIELD-EFFECT TRANSISTOR, 64A I(D), 250V, 0.02OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | |
| Manufacturer | Infineon | INFINEO | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | PG-TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 250 V | - | - |
| Id Continuous Drain Current | 64 A | - | - |
| Rds On Drain Source Resistance | 17.5 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 86 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 300 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Tube | - | - |
| Height | 15.65 mm | - | - |
| Length | 10 mm | - | - |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | OptiMOS 3 Power-Transistor | - | - |
| Width | 4.4 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 61 S | - | - |
| Fall Time | 12 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 20 ns | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 45 ns | - | - |
| Typical Turn On Delay Time | 18 ns | - | - |
| Part # Aliases | IPP200N25N3GXKSA1 IPP2N25N3GXK SP000677894 | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP200N25N3 G | MOSFET N-Ch 250V 64A TO220-3 OptiMOS 3 | |
| IPP200N25N3GXKSA1 | MOSFET N-Ch 250V 64A TO220-3 OptiMOS 3 | ||
| IPP200N25N3GXKSA1 | MOSFET N-CH 250V 64A TO220-3 | ||
| IPP200N25N3G | POWER FIELD-EFFECT TRANSISTOR, 64A I(D), 250V, 0.02OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | ||
| IPP200N25N3GXK | Trans MOSFET N-CH 250V 64A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: IPP200N25N3GXKSA1) | ||
| IPP200N25N3 | New and Original | ||
| IPP200N25N3G 200N25N | New and Original | ||
| IPP200N25N3G,200N25NG, | New and Original | ||
| IPP200N25N3GS | New and Original | ||
| IPP200N25N3 G | IGBT Transistors MOSFET N-Ch 250V 64A TO220-3 OptiMOS 3 |