IPP320N20N3

IPP320N20N3 G vs IPP320N20N3 vs IPP320N20N3G

 
PartNumberIPP320N20N3 GIPP320N20N3IPP320N20N3G
DescriptionMOSFET N-Ch 200V 34A TO220-3 OptiMOS 3POWER FIELD-EFFECT TRANSISTOR, 34A I(D), 200V, 0.032OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB
ManufacturerInfineon-INF
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current34 A--
Rds On Drain Source Resistance28 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge29 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation136 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingTube--
Height15.65 mm--
Length10 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
TypeOptiMOS 3 Power-Transistor--
Width4.4 mm--
BrandInfineon Technologies--
Forward Transconductance Min27 S--
Fall Time4 ns--
Product TypeMOSFET--
Rise Time9 ns--
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time21 ns--
Typical Turn On Delay Time11 ns--
Part # AliasesIPP320N20N3GXKSA1 IPP32N2N3GXK SP000677842--
Unit Weight0.211644 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPP320N20N3 G MOSFET N-Ch 200V 34A TO220-3 OptiMOS 3
IPP320N20N3GXKSA1 MOSFET N-Ch 200V 34A TO220-3 OptiMOS 3
IPP320N20N3GXKSA1 MOSFET N-CH 200V 34A TO220-3
IPP320N20N3G 320N20N New and Original
IPP320N20N3 New and Original
IPP320N20N3 G Trans MOSFET N-CH 200V 34A 3-Pin TO-220 Tube (Alt: IPP320N20N3 G)
IPP320N20N3G POWER FIELD-EFFECT TRANSISTOR, 34A I(D), 200V, 0.032OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB
IPP320N20N3G , 2SD968A-S New and Original
IPP320N20N3G(320N20N) New and Original
IPP320N20N3GS New and Original
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