IPP600N25N3G

IPP600N25N3GXKSA1 vs IPP600N25N3G

 
PartNumberIPP600N25N3GXKSA1IPP600N25N3G
DescriptionMOSFET N-Ch 250V 25A TO220-3 OptiMOS 3
ManufacturerInfineon-
Product CategoryMOSFET-
RoHSY-
TechnologySi-
Mounting StyleThrough Hole-
Package / CaseTO-220-3-
Number of Channels1 Channel-
Transistor PolarityN-Channel-
Vds Drain Source Breakdown Voltage250 V-
Id Continuous Drain Current25 A-
Rds On Drain Source Resistance51 mOhms-
Vgs th Gate Source Threshold Voltage2 V-
Vgs Gate Source Voltage20 V-
Qg Gate Charge29 nC-
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 175 C-
Pd Power Dissipation136 W-
ConfigurationSingle-
Channel ModeEnhancement-
TradenameOptiMOS-
PackagingTube-
Height15.65 mm-
Length10 mm-
SeriesOptiMOS 3-
Transistor Type1 N-Channel-
Width4.4 mm-
BrandInfineon Technologies-
Forward Transconductance Min24 S-
Fall Time8 ns-
Product TypeMOSFET-
Rise Time10 ns-
Factory Pack Quantity500-
SubcategoryMOSFETs-
Typical Turn Off Delay Time22 ns-
Typical Turn On Delay Time10 ns-
Part # AliasesG IPP600N25N3 IPP6N25N3GXK SP000677832-
Unit Weight0.211644 oz-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPP600N25N3GXKSA1 MOSFET N-Ch 250V 25A TO220-3 OptiMOS 3
IPP600N25N3GXKSA1 MOSFET N-CH 250V 25A TO220-3
IPP600N25N3G New and Original
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