PartNumber | IPP60R170CFD7XKSA1 | IPP60R165CPXKSA1 | IPP60R180C7XKSA1 |
Description | MOSFET HIGH POWER_NEW | MOSFET N-Ch 650V 21A TO220-3 CoolMOS CP | MOSFET HIGH POWER_NEW |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
Id Continuous Drain Current | 14 A | 21 A | 13 A |
Rds On Drain Source Resistance | 144 mOhms | 150 mOhms | 155 mOhms |
Vgs th Gate Source Threshold Voltage | 3.5 V | 2.5 V | 3 V |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 28 nC | 52 nC | 24 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 75 W | 192 W | 68 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | CoolMOS | CoolMOS | CoolMOS |
Packaging | Tube | Tube | Tube |
Series | CoolMOS CFD7 | CoolMOS CE | CoolMOS C7 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 9 ns | 5 ns | 6 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 15 ns | 5 ns | 7 ns |
Factory Pack Quantity | 500 | 500 | 500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 68 ns | 50 ns | 50 ns |
Typical Turn On Delay Time | 31 ns | 12 ns | 9.3 ns |
Part # Aliases | IPP60R170CFD7 SP001617974 | IPP60R165CP IPP6R165CPXK SP000084279 | IPP60R180C7 SP001277624 |
Height | - | 15.65 mm | 15.65 mm |
Length | - | 10 mm | 10 mm |
Width | - | 4.4 mm | 4.4 mm |
Unit Weight | - | 0.211644 oz | 0.211644 oz |