 |  | |
| PartNumber | IPP60R190P6 | IPP60R190P6XKSA1 |
| Description | MOSFET HIGH POWER_PRC/PRFRM | MOSFET N-CH 600V 20.2A TO220 |
| Manufacturer | Infineon | - |
| Product Category | MOSFET | - |
| RoHS | Y | - |
| Technology | Si | - |
| Mounting Style | Through Hole | - |
| Package / Case | PG-TO-220-3 | - |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | - |
| Id Continuous Drain Current | 20.2 A | - |
| Rds On Drain Source Resistance | 190 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3.5 V | - |
| Vgs Gate Source Voltage | 10 V | - |
| Qg Gate Charge | 37 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 151 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Tradename | CoolMOS | - |
| Packaging | Tube | - |
| Height | 15.65 mm | - |
| Length | 10 mm | - |
| Series | CoolMOS P6 | - |
| Transistor Type | 1 N-Channel | - |
| Width | 4.4 mm | - |
| Brand | Infineon Technologies | - |
| Fall Time | 7 ns | - |
| Product Type | MOSFET | - |
| Rise Time | 8 ns | - |
| Factory Pack Quantity | 500 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 45 ns | - |
| Typical Turn On Delay Time | 15 ns | - |
| Part # Aliases | IPP60R190P6XKSA1 SP001017066 | - |
| Unit Weight | 0.211644 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP60R190P6 | MOSFET HIGH POWER_PRC/PRFRM | |
| IPP60R190P6 | - Bulk (Alt: IPP60R190P6) | ||
| IPP60R190P6XKSA1 | MOSFET N-CH 600V 20.2A TO220 |