PartNumber | IPP60R210CFD7XKSA1 | IPP60R250CP | IPP60R230P6XKSA1 |
Description | MOSFET LOW POWER_NEW | MOSFET N-Ch 600V 12A TO220-3 CoolMOS CP | MOSFET LOW POWER_LEGACY |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
Id Continuous Drain Current | 12 A | 12 A | 16.8 A |
Rds On Drain Source Resistance | 210 mOhms | 220 mOhms | 207 mOhms |
Vgs th Gate Source Threshold Voltage | 3.5 V | 2.5 V | 3.5 V |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 23 nC | 35 nC | 31 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 64 W | 104 W | 126 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | Tube | Tube |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 7.5 ns | 12 ns | 6 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 16.5 ns | 17 ns | 7 ns |
Factory Pack Quantity | 500 | 500 | 500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 54 ns | 110 ns | 38 ns |
Typical Turn On Delay Time | 22 ns | 40 ns | 12 ns |
Part # Aliases | IPP60R210CFD7 SP001715660 | IPP60R250CPXKSA1 IPP6R25CPXK SP000358136 | IPP60R230P6XKSA1 SP001017064 |
Unit Weight | 0.074075 oz | 0.211644 oz | 0.211644 oz |
Tradename | - | CoolMOS | CoolMOS |
Height | - | 15.65 mm | 15.65 mm |
Length | - | 10 mm | 10 mm |
Series | - | CoolMOS CE | CoolMOS P6 |
Width | - | 4.4 mm | 4.4 mm |