 |  | | |
| PartNumber | IPP60R950C6XKSA1 | IPP60R950C6 | IPP60R950C6 , 2SJ133-Z-E |
| Description | MOSFET LOW POWER_LEGACY | Trans MOSFET N-CH 600V 4.4A 3-Pin(3+Tab) TO-220 | |
| Manufacturer | Infineon | Infineon Technologies | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | - | - |
| Tradename | CoolMOS | CoolMOS | - |
| Packaging | Tube | Tube | - |
| Height | 15.65 mm | - | - |
| Length | 10 mm | - | - |
| Width | 4.4 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Product Type | MOSFET | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | IPP60R950C6XKSA1 SP000629364 | - | - |
| Unit Weight | 0.211644 oz | 0.211644 oz | - |
| Series | - | CoolMOS C6 | - |
| Part Aliases | - | IPP60R950C6XK IPP60R950C6XKSA1 SP000629364 | - |
| Package Case | - | TO-220-3 | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single | - |
| Transistor Type | - | 1 N-Channel | - |
| Pd Power Dissipation | - | 37 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 4.4 A | - |
| Vds Drain Source Breakdown Voltage | - | 600 V | - |
| Rds On Drain Source Resistance | - | 950 mOhms | - |
| Transistor Polarity | - | N-Channel | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP60R950C6XKSA1 | MOSFET LOW POWER_LEGACY | |
| IPP60R950C6 | Trans MOSFET N-CH 600V 4.4A 3-Pin(3+Tab) TO-220 | ||
| IPP60R950C6 , 2SJ133-Z-E | New and Original | ||
Infineon Technologies |
IPP60R950C6XKSA1 | MOSFET N-CH 600V 4.4A TO220 |