| PartNumber | IPP80N04S4-04 | IPP80N04S4-03 | IPP80N04S403AKSA1 |
| Description | MOSFET N-Ch 40V 80A TO220-3 OptiMOS-T2 | MOSFET N-Ch 40V 80A TO220-3 OptiMOS-T2 | MOSFET N-CHANNEL_30/40V |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
| Id Continuous Drain Current | 80 A | 80 A | - |
| Rds On Drain Source Resistance | 4.3 mOhms | 3.3 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 43 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 71 W | - | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Tube | Tube | Tube |
| Height | 15.65 mm | 15.65 mm | 15.65 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | OptiMOS-T2 | OptiMOS-T2 | OptiMOS-T2 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 4.4 mm | 4.4 mm | 4.4 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 12 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 12 ns | - | - |
| Factory Pack Quantity | 500 | 500 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 9 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Part # Aliases | IPP80N04S404AKSA1 IPP8N4S44XK SP000646196 | IPP80N04S403AKSA1 IPP8N4S43XK SP000671756 | IPP80N04S4-03 IPP8N4S43XK SP000671756 |
| Unit Weight | 0.211644 oz | 0.211644 oz | 0.211644 oz |