IPS031N

IPS031N03L G vs IPS031N03L vs IPS031N03LCT

 
PartNumberIPS031N03L GIPS031N03LIPS031N03LCT
DescriptionMOSFET N-Ch 30V 90A IPAK-3 OptiMOS 3
ManufacturerInfineon-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-251-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current90 A--
Rds On Drain Source Resistance4.4 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation94 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingTube--
Height6.22 mm--
Length6.73 mm--
Transistor Type1 N-Channel--
Width2.38 mm--
BrandInfineon Technologies--
Forward Transconductance Min100 S--
Fall Time5 ns--
Product TypeMOSFET--
Rise Time6 ns--
Factory Pack Quantity1500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time34 ns--
Typical Turn On Delay Time9 ns--
Part # AliasesIPS031N03LGAKMA1 IPS031N03LGXK SP000788214--
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPS031N03L G MOSFET N-Ch 30V 90A IPAK-3 OptiMOS 3
IPS031N03LG New and Original
IPS031N03LCT New and Original
IPS031N03L New and Original
Infineon Technologies
Infineon Technologies
IPS031N03LGAKMA1 LV POWER MOS
IPS031N03L G IGBT Transistors MOSFET N-Ch 30V 90A IPAK-3 OptiMOS 3
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