PartNumber | IPS040N03LGAKMA1 | IPS040N03LG | IPS040N03L G |
Description | MOSFET LV POWER MOS | Trans MOSFET N-CH 30V 90A 3-Pin TO-251 Tube (Alt: SP000810846) | IGBT Transistors MOSFET N-Ch 30V 90A IPAK-3 OptiMOS 3 |
Manufacturer | Infineon | - | Infineon Technologies |
Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
Technology | Si | - | Si |
Mounting Style | Through Hole | - | Through Hole |
Package / Case | TO-251-3 | - | - |
Packaging | Tube | - | Tube |
Height | 6.22 mm | - | - |
Length | 6.73 mm | - | - |
Width | 2.38 mm | - | - |
Brand | Infineon Technologies | - | - |
Product Type | MOSFET | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | G IPS040N03L IPS040N03LGXK SP000810846 | - | - |
Unit Weight | 0.139332 oz | - | 0.139332 oz |
Series | - | - | OptiMOS 3 |
Part Aliases | - | - | IPS040N03LGAKMA1 IPS040N03LGXK SP000810846 |
Tradename | - | - | OptiMOS |
Package Case | - | - | IPAK-3 |
Number of Channels | - | - | 1 Channel |
Configuration | - | - | Single |
Transistor Type | - | - | 1 N-Channel |
Pd Power Dissipation | - | - | 79 W |
Maximum Operating Temperature | - | - | + 175 C |
Minimum Operating Temperature | - | - | - 55 C |
Fall Time | - | - | 4.2 ns |
Rise Time | - | - | 6.8 ns |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 90 A |
Vds Drain Source Breakdown Voltage | - | - | 30 V |
Rds On Drain Source Resistance | - | - | 4 mOhms |
Transistor Polarity | - | - | N-Channel |
Typical Turn Off Delay Time | - | - | 27 ns |
Typical Turn On Delay Time | - | - | 7.4 ns |
Channel Mode | - | - | Enhancement |