 |  | | |
| PartNumber | IPS80R1K2P7AKMA1 | IPS80R1K2P7 | IPS80R1K4P7 |
| Description | MOSFET | - Bulk (Alt: IPS80R1K4P7) | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | IPAK-SL-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 800 V | - | - |
| Id Continuous Drain Current | 4.5 A | - | - |
| Rds On Drain Source Resistance | 1 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 11 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 37 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | CoolMOS | - | - |
| Packaging | Tube | - | - |
| Series | CoolMOS P7 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 20 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 8 ns | - | - |
| Factory Pack Quantity | 1500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 40 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Part # Aliases | IPS80R1K2P7 SP001644626 | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPS80R1K2P7AKMA1 | MOSFET | |
| IPS80R1K2P7AKMA1 | MOSFET N-CH 800V 4.5A TO251-3 | ||
| IPS80R1K4P7AKMA1 | MOSFET N-CH 800V 4A IPAK-SL | ||
| IPS80R1K2P7 | New and Original | ||
| IPS80R1K4P7 | - Bulk (Alt: IPS80R1K4P7) | ||
| IPS80R1K4P7(1) | New and Original | ||
| IPS80R1K4P7. | New and Original |