PartNumber | IPW65R420CFDFKSA2 | IPW65R420CFDFKSA1 | IPW65R660CFDFKSA1 |
Description | MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improve | MOSFET LOW POWER_LEGACY | MOSFET N-CH 700V 6A TO247 |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-247-3 | TO-247-3 | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 650 V | - | - |
Id Continuous Drain Current | 8.7 A | - | - |
Rds On Drain Source Resistance | 420 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 3.5 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 31.5 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 83.3 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | CoolMOS | CoolMOS | - |
Packaging | Tube | Tube | - |
Series | CFD2 | - | - |
Transistor Type | 1 N-Channel | - | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Fall Time | 8 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 7 ns | - | - |
Factory Pack Quantity | 240 | - | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 38 ns | - | - |
Typical Turn On Delay Time | 10 ns | - | - |
Part # Aliases | IPW65R420CFD | IPW65R420CFD IPW65R42CFDXK SP000890686 | - |
Height | - | 21.1 mm | - |
Length | - | 16.13 mm | - |
Width | - | 5.21 mm | - |
Unit Weight | - | 1.340411 oz | - |