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| PartNumber | IRF1104PBF | IRF1104PBF,IRF1104 | IRF1104PBF,IRF1104,F1104 |
| Description | MOSFET 40V 1 N-CH HEXFET 2.2mOhms 43nC | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 100 A | - | - |
| Rds On Drain Source Resistance | 9 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 62 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 170 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 15.65 mm | - | - |
| Length | 10 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | Preliminary | - | - |
| Width | 4.4 mm | - | - |
| Brand | Infineon / IR | - | - |
| Fall Time | 19 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 114 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 28 ns | - | - |
| Typical Turn On Delay Time | 15 ns | - | - |
| Part # Aliases | SP001570050 | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon / IR |
IRF1104PBF | MOSFET 40V 1 N-CH HEXFET 2.2mOhms 43nC | |
Infineon Technologies |
IRF1104PBF | MOSFET N-CH 40V 100A TO-220AB | |
| IRF1104PBF,IRF1104 | New and Original | ||
| IRF1104PBF,IRF1104,F1104 | New and Original |