IRF1310NS

IRF1310NSTRLPBF vs IRF1310NSPBF vs IRF1310NSTRR

 
PartNumberIRF1310NSTRLPBFIRF1310NSPBFIRF1310NSTRR
DescriptionMOSFET MOSFT 100V 42A 36mOhm 73.3nCMOSFET 100V 1 N-CH HEXFET 36mOhms 73.3 nCMOSFET N-CH 100V 42A D2PAK
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current42 A42 A-
Rds On Drain Source Resistance36 mOhms36 mOhms-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge73.3 nC73.3 nC-
Pd Power Dissipation3.8 W3.8 W-
ConfigurationSingleSingle-
PackagingReelTube-
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm6.22 mm-
BrandInfineon TechnologiesInfineon Technologies-
Product TypeMOSFETMOSFET-
Factory Pack Quantity8001000-
SubcategoryMOSFETsMOSFETs-
Part # AliasesSP001561422SP001561414-
Unit Weight0.139332 oz0.139332 oz-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 175 C-
Channel Mode-Enhancement-
Type-HEXFET Power MOSFET-
Fall Time-40 ns-
Rise Time-56 ns-
Typical Turn Off Delay Time-45 ns-
Typical Turn On Delay Time-11 ns-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IRF1310NSTRLPBF MOSFET MOSFT 100V 42A 36mOhm 73.3nC
IRF1310NSTRR MOSFET N-CH 100V 42A D2PAK
IRF1310NSTRRPBF MOSFET N-CH 100V 42A D2PAK
IRF1310NSTRLPBF Darlington Transistors MOSFET MOSFT 100V 42A 36mOhm 73.3nC
IRF1310NSPBF IGBT Transistors MOSFET 100V 1 N-CH HEXFET 36mOhms 73.3 nC
Infineon Technologies
Infineon Technologies
IRF1310NSPBF MOSFET 100V 1 N-CH HEXFET 36mOhms 73.3 nC
IRF1310NSTRLPBF-CUT TAPE New and Original
IRF1310NS MOSFET Transistor, N-Channel, TO-263AB
IRF1310NSTRL N-Ch 100V 42A 160W 0,036R D�Pak
IRF1310NSTRPBF New and Original
Top