IRF1405ST

IRF1405STRLPBF vs IRF1405STRRPBF vs IRF1405STRR

 
PartNumberIRF1405STRLPBFIRF1405STRRPBFIRF1405STRR
DescriptionMOSFET MOSFT 55V 131A 5.3mOhm 170nCMOSFET 55V 1 N-CH HEXFET 5.3mOhms 170nCMOSFET N-CH 55V 131A D2PAK
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage55 V55 V-
Id Continuous Drain Current131 A131 A-
Rds On Drain Source Resistance5.3 mOhms5.3 mOhms-
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge170 nC170 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation200 W200 W-
ConfigurationSingleSingle-
PackagingReelReel-
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm6.22 mm-
BrandInfineon / IRInfineon Technologies-
Forward Transconductance Min69 S--
Fall Time110 ns110 ns-
Product TypeMOSFETMOSFET-
Rise Time190 ns190 ns-
Factory Pack Quantity800800-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time130 ns130 ns-
Typical Turn On Delay Time13 ns13 ns-
Part # AliasesSP001571200SP001576570-
Unit Weight0.139332 oz0.139332 oz-
Channel Mode-Enhancement-
Type-Automotive MOSFET-
Manufacturer Part # Description RFQ
Infineon / IR
Infineon / IR
IRF1405STRLPBF MOSFET MOSFT 55V 131A 5.3mOhm 170nC
Infineon Technologies
Infineon Technologies
IRF1405STRRPBF MOSFET 55V 1 N-CH HEXFET 5.3mOhms 170nC
IRF1405STRR MOSFET N-CH 55V 131A D2PAK
IRF1405STRLPBF MOSFET N-CH 55V 131A D2PAK
IRF1405STRRPBF MOSFET N-CH 55V 131A D2PAK
IRF1405STRLPBF-CUT TAPE New and Original
IRF1405STRRPBF-CUT TAPE New and Original
IRF1405STRPBF New and Original
IRF1405STRLPBF,IRF1405S, New and Original
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