IRF200

IRF200P222 vs IRF200B211 vs IRF200P223

 
PartNumberIRF200P222IRF200B211IRF200P223
DescriptionMOSFET IFX OPTIMOSMOSFET TRENCH_MOSFETSMOSFET IFX OPTIMOS
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247AC-3TO-220-3TO-247AC-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage200 V200 V200 V
Id Continuous Drain Current182 A12 A100 A
Rds On Drain Source Resistance6.6 mOhms170 mOhms11.5 mOhms
Vgs th Gate Source Threshold Voltage2 V3 V2 V
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge203 nC15.3 nC102 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameStrongIRFETStrongIRFETStrongIRFET
PackagingTubeTubeTube
Transistor Type1 N-Channel-1 N-Channel
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Forward Transconductance Min142 S13 S93 S
Fall Time97 ns6.5 ns62 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time96 ns9.5 ns66 ns
Factory Pack Quantity4001000400
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time77 ns11.3 ns55 ns
Typical Turn On Delay Time25 ns6.5 ns16 ns
Part # AliasesSP001582092SP001561622SP001582440
Unit Weight0.211644 oz0.081130 oz0.211644 oz
Pd Power Dissipation-80 W313 W
Height-15.65 mm-
Length-10 mm-
Width-4.4 mm-
Moisture Sensitive--Yes
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IRF200P222 MOSFET IFX OPTIMOS
IRF200B211 MOSFET TRENCH_MOSFETS
IRF200S234 MOSFET TRENCH_MOSFETS
IRF200P222 MOSFET N-CH 200V 182A TO247AC
IRF200P223 MOSFET N-CH 200V 100A TO247AC
IRF200S234 TRENCH_MOSFETS
IRF200B211 MOSFET N-CH 200V 12A TO-220AB
Infineon Technologies
Infineon Technologies
IRF200P223 MOSFET IFX OPTIMOS
IRF2001 New and Original
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