IRF3711S

IRF3711SPBF vs IRF3711STRL vs IRF3711S

 
PartNumberIRF3711SPBFIRF3711STRLIRF3711S
DescriptionMOSFET 20V 1 N-CH HEXFET 6mOhms 29nCMOSFET N-CH 20V 110A D2PAKMOSFET N-CH 20V 110A D2PAK
ManufacturerInfineonIRIR
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSY--
TechnologySiMOSFET (Metal Oxide)-
Mounting StyleSMD/SMT--
Package / CaseTO-252-3TO-263-3, DPak (2 Leads + Tab), TO-263AB-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current110 A--
Rds On Drain Source Resistance8.5 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge29 nC--
Pd Power Dissipation120 W--
ConfigurationSingle--
PackagingTubeTape & Reel (TR)-
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandInfineon / IR--
Product TypeMOSFET--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Part # AliasesSP001576712--
Unit Weight0.139332 oz--
Series-HEXFET-
Part Status-Obsolete-
FET Type-N-Channel-
Drain to Source Voltage (Vdss)-20V-
Current Continuous Drain (Id) @ 25°C-110A (Tc)-
Drive Voltage (Max Rds On, Min Rds On)-4.5V, 10V-
Vgs(th) (Max) @ Id-3V @ 250A-
Gate Charge (Qg) (Max) @ Vgs-44nC @ 4.5V-
Vgs (Max)-±20V-
Input Capacitance (Ciss) (Max) @ Vds-2980pF @ 10V-
FET Feature---
Power Dissipation (Max)-3.1W (Ta), 120W (Tc)-
Rds On (Max) @ Id, Vgs-6 mOhm @ 15A, 10V-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-D2PAK-
Manufacturer Part # Description RFQ
Infineon / IR
Infineon / IR
IRF3711SPBF MOSFET 20V 1 N-CH HEXFET 6mOhms 29nC
IRF3711STRLPBF MOSFET 20V 1 N-CH HEXFET 6mOhms 29nC
IRF3711STRRPBF MOSFET 20V 1 N-CH HEXFET 6mOhms 29nC
Infineon Technologies
Infineon Technologies
IRF3711SPBF MOSFET N-CH 20V 110A D2PAK
IRF3711STRL MOSFET N-CH 20V 110A D2PAK
IRF3711STRLPBF MOSFET N-CH 20V 110A D2PAK
IRF3711STRR MOSFET N-CH 20V 110A D2PAK
IRF3711STRRPBF MOSFET N-CH 20V 110A D2PAK
IRF3711S MOSFET N-CH 20V 110A D2PAK
IRF3711STRPBF. New and Original
IRF3711S F3711S New and Original
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