PartNumber | IRF510PBF | IRF510S | IRF510 |
Description | MOSFET N-CH 100V HEXFET MOSFET D2-PA | MOSFET RECOMMENDED ALT 844-IRF510SPBF | MOSFET RECOMMENDED ALT 844-IRF510PBF |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | E | N | N |
Technology | Si | Si | Si |
Mounting Style | Through Hole | SMD/SMT | - |
Package / Case | TO-220AB-3 | TO-263-3 | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 100 V | - | - |
Id Continuous Drain Current | 5.6 A | - | - |
Rds On Drain Source Resistance | 540 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 8.3 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 43 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Tube | Tube | Tube |
Series | IRF | IRF | IRF |
Transistor Type | 1 N-Channel | - | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 1.3 S | - | - |
Fall Time | 9.4 ns | - | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 16 ns | - | - |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 15 ns | - | - |
Typical Turn On Delay Time | 6.9 ns | - | - |
Unit Weight | 0.211644 oz | 0.050717 oz | 0.211644 oz |
Height | - | 4.83 mm | - |
Length | - | 10.67 mm | - |
Width | - | 9.65 mm | - |