PartNumber | IRF5210STRLPBF | IRF5210STRR | IRF5210SPBF |
Description | MOSFET MOSFT PCh -100V -0.4A 60mOhm 120nC | MOSFET P-CH 100V 40A D2PAK | MOSFET P-CH 100V 38A D2PAK |
Manufacturer | Infineon | - | IR |
Product Category | MOSFET | - | FETs - Single |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | TO-252-3 | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | P-Channel | - | P-Channel |
Vds Drain Source Breakdown Voltage | 100 V | - | - |
Id Continuous Drain Current | 40 A | - | - |
Rds On Drain Source Resistance | 60 mOhms | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 120 nC | - | - |
Pd Power Dissipation | 3.8 W | - | - |
Configuration | Single | - | Single |
Packaging | Reel | - | Tube |
Height | 2.3 mm | - | - |
Length | 6.5 mm | - | - |
Transistor Type | 1 P-Channel | - | 1 P-Channel |
Width | 6.22 mm | - | - |
Brand | Infineon Technologies | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 800 | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | SP001554020 | - | - |
Unit Weight | 0.139332 oz | - | 0.139332 oz |
Package Case | - | - | TO-252-3 |
Pd Power Dissipation | - | - | 3.8 W |
Maximum Operating Temperature | - | - | + 150 C |
Minimum Operating Temperature | - | - | - 55 C |
Fall Time | - | - | 55 ns |
Rise Time | - | - | 63 ns |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | - 40 A |
Vds Drain Source Breakdown Voltage | - | - | - 100 V |
Rds On Drain Source Resistance | - | - | 60 mOhms |
Typical Turn Off Delay Time | - | - | 72 ns |
Typical Turn On Delay Time | - | - | 14 ns |
Qg Gate Charge | - | - | 120 nC |
Channel Mode | - | - | Enhancement |