PartNumber | IRF540NSTRRPBF | IRF540NSTRRPBF-CUT TAPE | IRF540NSTRR |
Description | MOSFET 100V 1 N-CH HEXFET 44mOhms 47.3nC | HEXFET N-CH MOSFET 33A 100V D2PAK, PK | |
Manufacturer | Infineon | - | IR |
Product Category | MOSFET | - | FETs - Single |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | TO-263-3 | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | - | - |
Id Continuous Drain Current | 33 A | - | - |
Rds On Drain Source Resistance | 44 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 4 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 47.3 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 175 C | - | + 175 C |
Pd Power Dissipation | 3.8 W | - | - |
Configuration | Single | - | Single |
Channel Mode | Enhancement | - | Enhancement |
Packaging | Reel | - | Reel |
Height | 4.4 mm | - | - |
Length | 10 mm | - | - |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Type | HEXFET Power MOSFET | - | - |
Width | 9.25 mm | - | - |
Brand | Infineon Technologies | - | - |
Forward Transconductance Min | 21 S | - | - |
Fall Time | 35 ns | - | 35 ns |
Product Type | MOSFET | - | - |
Rise Time | 35 ns | - | 35 ns |
Factory Pack Quantity | 800 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 39 ns | - | 39 ns |
Typical Turn On Delay Time | 11 ns | - | 11 ns |
Part # Aliases | SP001571284 | - | - |
Unit Weight | 0.139332 oz | - | 0.139332 oz |
Package Case | - | - | TO-252-3 |
Pd Power Dissipation | - | - | 3.8 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 33 A |
Vds Drain Source Breakdown Voltage | - | - | 100 V |
Vgs th Gate Source Threshold Voltage | - | - | 2 V to 4 V |
Rds On Drain Source Resistance | - | - | 44 mOhms |
Qg Gate Charge | - | - | 47.3 nC |
Forward Transconductance Min | - | - | 21 S |