IRF540NSTRR

IRF540NSTRRPBF vs IRF540NSTRRPBF-CUT TAPE vs IRF540NSTRR

 
PartNumberIRF540NSTRRPBFIRF540NSTRRPBF-CUT TAPEIRF540NSTRR
DescriptionMOSFET 100V 1 N-CH HEXFET 44mOhms 47.3nCHEXFET N-CH MOSFET 33A 100V D2PAK, PK
ManufacturerInfineon-IR
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTO-263-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current33 A--
Rds On Drain Source Resistance44 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge47.3 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation3.8 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
PackagingReel-Reel
Height4.4 mm--
Length10 mm--
Transistor Type1 N-Channel-1 N-Channel
TypeHEXFET Power MOSFET--
Width9.25 mm--
BrandInfineon Technologies--
Forward Transconductance Min21 S--
Fall Time35 ns-35 ns
Product TypeMOSFET--
Rise Time35 ns-35 ns
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time39 ns-39 ns
Typical Turn On Delay Time11 ns-11 ns
Part # AliasesSP001571284--
Unit Weight0.139332 oz-0.139332 oz
Package Case--TO-252-3
Pd Power Dissipation--3.8 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--33 A
Vds Drain Source Breakdown Voltage--100 V
Vgs th Gate Source Threshold Voltage--2 V to 4 V
Rds On Drain Source Resistance--44 mOhms
Qg Gate Charge--47.3 nC
Forward Transconductance Min--21 S
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IRF540NSTRRPBF MOSFET 100V 1 N-CH HEXFET 44mOhms 47.3nC
IRF540NSTRRPBF Darlington Transistors MOSFET 100V 1 N-CH HEXFET 44mOhms 47.3nC
IRF540NSTRRPBF-CUT TAPE New and Original
IRF540NSTRR HEXFET N-CH MOSFET 33A 100V D2PAK, PK
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