IRF634B-F

IRF634B-FP001

 
PartNumberIRF634B-FP001
DescriptionMOSFET 250V Single
ManufacturerON Semiconductor
Product CategoryMOSFET
RoHSY
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds Drain Source Breakdown Voltage250 V
Id Continuous Drain Current8.1 A
Rds On Drain Source Resistance450 mOhms
Vgs Gate Source Voltage30 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd Power Dissipation74 W
ConfigurationSingle
Channel ModeEnhancement
PackagingTube
Height16.3 mm
Length10.67 mm
SeriesIRF634B
Transistor Type1 N-Channel
TypeMOSFET
Width4.7 mm
BrandON Semiconductor / Fairchild
Fall Time65 ns
Product TypeMOSFET
Rise Time75 ns
Factory Pack Quantity50
SubcategoryMOSFETs
Typical Turn Off Delay Time100 ns
Typical Turn On Delay Time15 ns
Part # AliasesIRF634B_FP001
Unit Weight0.063493 oz
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
IRF634B-FP001 MOSFET 250V Single
ON Semiconductor
ON Semiconductor
IRF634B-FP001 MOSFET N-CH 250V 8.1A TO-220
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